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Using Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules overclocked to DDR2-1200

Discussion in 'Overclocking' started by Phil Weldon, Jun 18, 2007.

  1. Phil Weldon

    Phil Weldon Guest

    Using Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules overclocked to
    DDR2-1200 (FSB 1200 MHz, Memory Clock : CPU Clock ratio = 2:1)
    Room Ambient Temperature: 28 C
    Memory Heatsink temperature ~ 45 - 50 C
    CPU cooling: Stock Intel boxed, retail heatsink/fan

    This overclock is stable with Orthos 'Blend - stress CPU and RAM' and with
    Othos 'Small FFTs - stress CPU

    Motherboard: EVGA 680i
    CPU: Intel E4300
    Memory: 2 X Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules
    Graphics Adapter: EVGA 8800 GTS 320 MB @ 650 MHz GPU / 850 MHz Memory
    Operating System: Windows XP SP2 and all security patches
    FSB: 1200 MHz
    CPU clock multiplier: x9
    CPU core voltage: 1.25000 v set, 1.21 v reported

    FSB & Memory Config
    SLI Memory: [Disable]
    FSB - Memory Clock Mode: [Unlinked]

    FSB (QDR), MHz: [1200]

    MEM (DDR), MHz: [1200]

    Memory Timing Setting
    Memory Timing Setting: [Expert]
    tCL (CAS Latency): [5]
    tRCD: [4]
    tRP: [4]
    tRAS: [9]
    Command Per Clock (CMD): [2T]
    tRRD: [5]
    tRC: [31]
    tWR: [6]
    tWTR: [6]
    tREF: [7.8us]

    Voltages
    CPU: [1.25000] (1.25000 v set, 1.21 v reported)
    CPU FSB: [1.4]
    Memory: [2.325]
    SPP: [1.45]
    MCP: [1.45]
    HT SPP <-> MCP: [1.2]

    SPD information for Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules

    Memory type: DDR2 SDRAM
    Error correction: NONE
    Voltage interface level: SSTL (1.8V)
    Data width: 64 bits
    Number of physical banks: 2 (double sided)
    Number of logical banks: 4
    Number of row addresses: 14 14
    Number of col addresses: 10 10
    Bank density: 512 MB
    Primary RAM Width: 8 8 bits
    Error checking RAM Width: 0 0 bits
    Module density: 1024 MB
    Refresh rate: 7812.500 us
    Self-refresh: Yes
    Burst lengths supported: 4 8
    CAS 3.0:
    Cycle time (tCYC) = 5.000 ns fMax = 200.000 MHz
    Access time (tAC) = 0.600 ns fMax = 1666.667 MHz

    CAS 4.0:
    Cycle time (tCYC) = 4.300 ns fMax = 232.558 MHz
    Access time (tAC) = 0.500 ns fMax = 2000.000 MHz

    CAS 5.0:
    Cycle time (tCYC) = 2.500 ns fMax = 400.000 MHz
    Access time (tAC) = 0.400 ns fMax = 2500.000 MHz

    Minimum delay, Bk/Bk random cols: 0 clocks
    Min row precharge time (tRP): 12.500 ns
    Min row active delay (tRRD): 7.500 ns
    Min RAS to CAS delay (tRCD): 12.500 ns
    Min Actv to precharge (tRAS): 39.000 ns
    Addr/Cmd setup time: 0.170 ns
    Addr/Cmd hold time: 0.250 ns
    Data setup time: 0.050 ns
    Data hold time: 0.120 ns
    Write recovery time (tWR): 15.000 ns
    Int Wr to Rd Cmd Dly (tWTR): 7.5 ns
    Int Rd to Pchg Cmd Dly (tRPT): 7.500 ns
    Min Act/Auto-Rfrsh Time (tRC): 51.500 ns
    Min Auto-Rfrsh/Act Cmd (tRFC): 105.000 ns
    Max Dev Cycle time (tCK max): 8.000 ns
    Max DQS-DQ Skew (tDQSQ max): 2.000 ns
    Rd data hold skew Fctr (tQHS): 3.000 ns
    PLL relock time: 0.000 ns
    Memory analysis probe chars: 00
    DIMM type: UDIMM (module width = 133.35mm)
    FET switch external enable: No
    Analysis probe installed: No
    Includes weak dirver: Yes
    Manufacturer's JEDC ID code: 0000027f7f7f7f7f
    Module manufacturing location: 1 (manufacture dependent)
    Module part number: PDC22G8500ELK
    Module revision code: 0 (manufacturer dependent)
    Module manufacturing date: Not reported
    Module serial number: 00000000
    SPD revision: 1.1

    --NVIDIA Enhanced Performance PRofile SPD information--
    SPD version: B1
    Profile for Optimal Performance: 01

    Profile 0 invalid
    Voltage Level: 4.9V
    Address Command Rate: 2T
    Address Drive Strength: 2.0x
    Chip Select Drive Strength: 2.0x
    Clock Drive Strength: 1.5x
    Data Drive Strength: 1.5x
    DQS Drive Strength: 1.5x
    Address Fine Delay: 31/64 MEMCLK delay
    Address Setup Time: 1 MEMCLK
    Chip Select Fine Delay: 31.64 MEMCLK delay
    Chip Select Setup Time: 1 MEMCLK delay

    Profile 1 valid
    Voltage level: 2.3V
    Address Command Rate: 2T
    Address Drive Stength: 1.0x
    Chip Select Drive Strength: 1.0x
    Clock Drive Strength: 1.0x
    Data Drive Strength: 1.0x
    DQS Drive Strength: 1.0x
    Address Fine Delay: 1.0
    Address Setup Time: 1 MEMCLK
    Chip Select Fine Delay: No delay
    Chip Select Setup Time: 1 MEMCLK

    Each time I look at all this information I discover new concepts, and
    realize how wrong some of my older concepts are B^)

    I do not intend to try a higher CPU overclock, a different CPU, or a higher
    memory overclock until I do something about the heat. Watercooling for the
    CPU and better air cooling for the memory. The air is so dry because of the
    extreme drought in most of Georgia that 28 C is quite a comfortable indoor
    temperature, and an extra $75 US per month to bring it down enough to
    improve overclocking is not worth it. I have all the parts for water
    cooling, now to find the will.

    Phil Weldon
     
    Phil Weldon, Jun 18, 2007
    #1
    1. Advertising

  2. Phil Weldon

    Ed Medlin Guest

    "Phil Weldon" <> wrote in message
    news:OcDdi.1825$...
    > Using Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules overclocked to
    > DDR2-1200 (FSB 1200 MHz, Memory Clock : CPU Clock ratio = 2:1)
    > Room Ambient Temperature: 28 C
    > Memory Heatsink temperature ~ 45 - 50 C
    > CPU cooling: Stock Intel boxed, retail heatsink/fan
    >
    > This overclock is stable with Orthos 'Blend - stress CPU and RAM' and with
    > Othos 'Small FFTs - stress CPU
    >
    > Motherboard: EVGA 680i
    > CPU: Intel E4300
    > Memory: 2 X Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules
    > Graphics Adapter: EVGA 8800 GTS 320 MB @ 650 MHz GPU / 850 MHz Memory
    > Operating System: Windows XP SP2 and all security patches
    > FSB: 1200 MHz
    > CPU clock multiplier: x9
    > CPU core voltage: 1.25000 v set, 1.21 v reported
    >
    > FSB & Memory Config
    > SLI Memory: [Disable]
    > FSB - Memory Clock Mode: [Unlinked]
    >
    > FSB (QDR), MHz: [1200]
    >
    > MEM (DDR), MHz: [1200]
    >
    > Memory Timing Setting
    > Memory Timing Setting: [Expert]
    > tCL (CAS Latency): [5]
    > tRCD: [4]
    > tRP: [4]
    > tRAS: [9]
    > Command Per Clock (CMD): [2T]
    > tRRD: [5]
    > tRC: [31]
    > tWR: [6]
    > tWTR: [6]
    > tREF: [7.8us]
    >
    > Voltages
    > CPU: [1.25000] (1.25000 v set, 1.21 v reported)
    > CPU FSB: [1.4]
    > Memory: [2.325]
    > SPP: [1.45]
    > MCP: [1.45]
    > HT SPP <-> MCP: [1.2]
    >
    > SPD information for Patriot PDC22G8500ELK DDR2-667/PC8500 1 GByte modules
    >
    > Memory type: DDR2 SDRAM
    > Error correction: NONE
    > Voltage interface level: SSTL (1.8V)
    > Data width: 64 bits
    > Number of physical banks: 2 (double sided)
    > Number of logical banks: 4
    > Number of row addresses: 14 14
    > Number of col addresses: 10 10
    > Bank density: 512 MB
    > Primary RAM Width: 8 8 bits
    > Error checking RAM Width: 0 0 bits
    > Module density: 1024 MB
    > Refresh rate: 7812.500 us
    > Self-refresh: Yes
    > Burst lengths supported: 4 8
    > CAS 3.0:
    > Cycle time (tCYC) = 5.000 ns fMax = 200.000 MHz
    > Access time (tAC) = 0.600 ns fMax = 1666.667 MHz
    >
    > CAS 4.0:
    > Cycle time (tCYC) = 4.300 ns fMax = 232.558 MHz
    > Access time (tAC) = 0.500 ns fMax = 2000.000 MHz
    >
    > CAS 5.0:
    > Cycle time (tCYC) = 2.500 ns fMax = 400.000 MHz
    > Access time (tAC) = 0.400 ns fMax = 2500.000 MHz
    >
    > Minimum delay, Bk/Bk random cols: 0 clocks
    > Min row precharge time (tRP): 12.500 ns
    > Min row active delay (tRRD): 7.500 ns
    > Min RAS to CAS delay (tRCD): 12.500 ns
    > Min Actv to precharge (tRAS): 39.000 ns
    > Addr/Cmd setup time: 0.170 ns
    > Addr/Cmd hold time: 0.250 ns
    > Data setup time: 0.050 ns
    > Data hold time: 0.120 ns
    > Write recovery time (tWR): 15.000 ns
    > Int Wr to Rd Cmd Dly (tWTR): 7.5 ns
    > Int Rd to Pchg Cmd Dly (tRPT): 7.500 ns
    > Min Act/Auto-Rfrsh Time (tRC): 51.500 ns
    > Min Auto-Rfrsh/Act Cmd (tRFC): 105.000 ns
    > Max Dev Cycle time (tCK max): 8.000 ns
    > Max DQS-DQ Skew (tDQSQ max): 2.000 ns
    > Rd data hold skew Fctr (tQHS): 3.000 ns
    > PLL relock time: 0.000 ns
    > Memory analysis probe chars: 00
    > DIMM type: UDIMM (module width = 133.35mm)
    > FET switch external enable: No
    > Analysis probe installed: No
    > Includes weak dirver: Yes
    > Manufacturer's JEDC ID code: 0000027f7f7f7f7f
    > Module manufacturing location: 1 (manufacture dependent)
    > Module part number: PDC22G8500ELK
    > Module revision code: 0 (manufacturer dependent)
    > Module manufacturing date: Not reported
    > Module serial number: 00000000
    > SPD revision: 1.1
    >
    > --NVIDIA Enhanced Performance PRofile SPD information--
    > SPD version: B1
    > Profile for Optimal Performance: 01
    >
    > Profile 0 invalid
    > Voltage Level: 4.9V
    > Address Command Rate: 2T
    > Address Drive Strength: 2.0x
    > Chip Select Drive Strength: 2.0x
    > Clock Drive Strength: 1.5x
    > Data Drive Strength: 1.5x
    > DQS Drive Strength: 1.5x
    > Address Fine Delay: 31/64 MEMCLK delay
    > Address Setup Time: 1 MEMCLK
    > Chip Select Fine Delay: 31.64 MEMCLK delay
    > Chip Select Setup Time: 1 MEMCLK delay
    >
    > Profile 1 valid
    > Voltage level: 2.3V
    > Address Command Rate: 2T
    > Address Drive Stength: 1.0x
    > Chip Select Drive Strength: 1.0x
    > Clock Drive Strength: 1.0x
    > Data Drive Strength: 1.0x
    > DQS Drive Strength: 1.0x
    > Address Fine Delay: 1.0
    > Address Setup Time: 1 MEMCLK
    > Chip Select Fine Delay: No delay
    > Chip Select Setup Time: 1 MEMCLK
    >
    > Each time I look at all this information I discover new concepts, and
    > realize how wrong some of my older concepts are B^)
    >
    > I do not intend to try a higher CPU overclock, a different CPU, or a
    > higher
    > memory overclock until I do something about the heat. Watercooling for
    > the
    > CPU and better air cooling for the memory. The air is so dry because of
    > the
    > extreme drought in most of Georgia that 28 C is quite a comfortable indoor
    > temperature, and an extra $75 US per month to bring it down enough to
    > improve overclocking is not worth it. I have all the parts for water
    > cooling, now to find the will.
    >
    > Phil Weldon
    >
    >


    Thanks for the update, especially the memory settings. That will help
    give me a start since my memory specs are very close to yours and rated for
    2.35v. I am pretty much done with the E6600 processor overclock from 2.4ghz
    to 3.2ghz. That seems to be about all I can get with liquid cooling. Temps
    are not an issue with max load temps in the 50c area. I think that is just
    all this particular processor will do. I get the same stability at default
    vcore as I do by increasing it. I have had the vcore up to 1.50v with no
    increase in stability at any speed. The temps stay fairly constant with only
    a small 2-4deg rise but start getting some instability in some programs
    although Orthos will run fine up to 3.6ghz. I consider the overclock quite
    successful and it is a very noticeable gain in performance from 2.4ghz. I
    think that liquid cooling might help you quite a bit and maybe get you up
    over 3ghz if you get lucky..

    Ed
     
    Ed Medlin, Jun 19, 2007
    #2
    1. Advertising

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